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QL65E53A/B

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The QL65E53A/B from Quantum Semiconductor International is a Laser Diode with Wavelength 645 to 660 nm, Output Power 7 mW, Output Power 7 mW, Output Power (CW) 7 mW, Threshold Current 12 to 19 mA. More details for QL65E53A/B can be seen below.

Product Specifications

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Product Details

  • Part Number
    QL65E53A/B
  • Manufacturer
    Quantum Semiconductor International
  • Description
    MOCVD grown 650 nm band InGaAlP laser diode with quantum well structure

Applications

  • Application
    Laser Pointer, Bar Code Reader, Medical Device

General Parameters

  • Technology
    Quantum Well
  • Type
    Free Space Laser Diode
  • Operation Mode
    CW Laser
  • Wavelength
    645 to 660 nm
  • Output Power
    7 mW
  • Output Power
    7 mW
  • Output Power (CW)
    7 mW
  • Slope Efficiency
    0.6 to 1.2 mW/mA
  • Configuration
    Single-Emitter
  • Beam Divergence Parallel
    4 to 14 Degree
  • Beam Divergence Perpendicular
    25 to 45 Degree
  • Laser Gain Medium
    InGaAlP Lasers
  • Threshold Current :
    12 to 19 mA
  • Reverse Voltage
    LD Reverse Voltage: 2 V
  • Operating Current
    19 to 30 mA
  • Operating Current
    19 to 30 mA
  • Reverse Voltage(PD)
    30 V
  • Operating Voltage
    2 to 2.5 V
  • Operating Current (CW)
    19 to 30 mA
  • Monitor Current
    0.05 to 0.4 mA
  • Laser Color
    Red
  • Package Type
    TO-Can
  • Package
    TO-18 (3.3 mmf)
  • Note
    Beam Angle Parallel: ±3 Degree, Beam Angle Parpendicular: ±3 Degree, Optical Distance: ±60 µm

Physical Properties

  • Dimension
    3.3mm

Temperature

  • Operating Temperature
    -10 to 50 °C
  • Storage Temperature
    -40 to 85 °C

Technical Documents
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