TO9-267

Laser Diode by SemiNex Corporation

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The TO9-267 from SemiNex Corporation is a Laser Diode with Wavelength 1550 nm, Output Power 75000 to 100000 mW, Output Power 75 to 100 W, Threshold Current 2 A, Operating Current 75 to 100 A. More details for TO9-267 can be seen below.

Product Specifications

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Product Details

  • Part Number
    TO9-267
  • Manufacturer
    SemiNex Corporation
  • Description
    75 to 100 W, 1550 nm Infrared Laser Diode in TO-Can Package

Applications

  • Application
    OEM Medical, Professional Medical, LiDAR, Military / Aerospace, Illumination

General Parameters

  • Type
    Free Space Laser Diode
  • Operation Mode
    CW Lasers
  • Wavelength
    1550 nm
  • Output Power
    75000 to 100000 mW
  • Output Power
    75 to 100 W
  • Spectral Width (FWHM)
    22 nm
  • Pulse Duration
    <10 to 150 ns
  • Slope Efficiency
    1 W/A
  • Configuration
    Single-Emitter
  • Beam Divergence Parallel
    12 Degrees (Slow Axis)
  • Beam Divergence Perpendicular
    28 Degrees (Fast Axis)
  • Chip Technology
    InP
  • Emitter Width
    350 µm
  • Power Conversion Efficiency
    0.09
  • Threshold Current :
    2 A
  • Operating Current
    75 to 100 A
  • Operating Current
    75 to 100 A
  • Operating Voltage
    11 V
  • Laser Class
    Class IIIb, Class IV
  • Laser Color
    Infrared
  • Fiber Modes
    Single Mode, Multi-Mode
  • Package Type
    TO-Can
  • Package
    TO9
  • Note
    Chip Cavity Length: 2500 µm, Emitter Height: 10 µm

Physical Properties

  • Weight
    0 g

Temperature

  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -40 to 85 Degree C
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