BP 104 FAS

Photodiode by ams OSRAM

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The BP 104 FAS from ams OSRAM is a Photodiode with Wavelength Range 730 to 1100 nm, Capacitance 48 pF, Dark Current 2 to 30 nA, Responsivity/Photosensitivity 0.63 A/W, Rise Time 0.02 µs. More details for BP 104 FAS can be seen below.

Product Specifications

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Product Details

  • Part Number
    BP 104 FAS
  • Manufacturer
    ams OSRAM
  • Description
    Silicon PIN photodiode from 730 to 1100 nm

Applications

  • Application
    LIDAR, Pre-Crash, ACC, Rain Sensors

General Parameters

  • Configuration
    Single
  • Fall Time
    0.02 µs
  • Forward Voltage
    1.3 V
  • Module
    No
  • Noise equivalent power(NEP) :
    0.04 pW/Hz1/2
  • Package
    DIL, SMT
  • Package Type
    DIL, Surface Mount
  • Photodetector Type
    PIN
  • Operation Mode
    Photoconductive
  • Wavelength Range
    730 to 1100 nm
  • Photodiode Material
    Silicon
  • Power Dissipation
    150 mW
  • Reverse Voltage
    20 V
  • Short Circuit Current
    16 µA
  • Capacitance
    48 pF
  • Dark Current
    2 to 30 nA
  • Responsivity/Photosensitivity
    0.63 A/W
  • Rise Time
    0.02 µs
  • Note
    Open-circuit voltage: 250 to 330 mV, Half angle: 60 Degree

Physical Properties

  • Active Area
    2.2 x 2.2 mm

Temperature

  • Operating Temperature display
    -40 to 100 Degree C
  • Storage Temperature
    -40 to 100 Degree C
  • Temperature Coefficient
    0.03 %/K

Technical Documents

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