GAP1000Q

Photodiode by GPD Optoelectronics

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The GAP1000Q from GPD Optoelectronics is a Photodiode with Wavelength Range 800 to 1700 nm, Capacitance 8 to 31 pF, Dark Current 0.6 to 6 nA, Responsivity/Photosensitivity 0.9 to 0.95 A/W, Rise Time 1 ns. More details for GAP1000Q can be seen below.

Product Specifications

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Product Details

  • Part Number
    GAP1000Q
  • Manufacturer
    GPD Optoelectronics

Applications

  • Application
    Beam Alignment, Laser Guidance Optical Tweezers, Beam Profiling

General Parameters

  • Configuration
    Single
  • Channels
    Quad
  • Cut-Off Wavelength
    1650 nm
  • Forward Current
    10 mA
  • Module
    No
  • Package
    TO-46
  • Package Type
    TO-Can
  • Operation Mode
    Photovoltaic
  • Wavelength Range
    800 to 1700 nm
  • Photodiode Material
    InGaAs
  • Reverse Current
    1 mA
  • Rise/Fall Time
    Rise / Fall time: 1 ns
  • RoHs
    Yes
  • Shunt Resistance
    88 to 176 MOhms
  • Capacitance
    8 to 31 pF
  • Dark Current
    0.6 to 6 nA
  • Responsivity/Photosensitivity
    0.9 to 0.95 A/W
  • Rise Time
    1 ns

Physical Properties

  • Active Area
    1 x 1 mm2

Temperature

  • Operating Temperature display
    -40 to 70 Degree C
  • Storage Temperature
    -40 to 85 Degree C

Technical Documents

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