GAP2000PDL

Photodiode by GPD Optoelectronics

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The GAP2000PDL from GPD Optoelectronics is a Photodiode with Wavelength Range Peak wavelength: 1.6 µm, Capacitance 300 pF, Dark Current 50 nA, Responsivity/Photosensitivity 0.9 to 1 A/W, Rise Time 33 ns. More details for GAP2000PDL can be seen below.

Product Specifications

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Product Details

  • Part Number
    GAP2000PDL
  • Manufacturer
    GPD Optoelectronics

Applications

  • Application
    Back-Facet Laserdiode Monitor, Optical Power Meters, Polarization Characterization from Optical Fibers, Couplers and Connectors, LD/LED Test and Measurement

General Parameters

  • Configuration
    Single
  • Channels
    Single
  • Cut-Off Wavelength
    1.7 µm
  • Forward Current
    10 mA
  • Module
    No
  • Package
    TO-5
  • Package Type
    TO-Can
  • Operation Mode
    Photoconductive
  • Wavelength Range
    Peak wavelength: 1.6 µm
  • Photodiode Material
    InGaAs
  • Power Dissipation
    50 mW
  • Reverse Current
    10 mA
  • Reverse Voltage
    2 V
  • Rise/Fall Time
    Rise time: 33 ns
  • RoHs
    Yes
  • Shunt Resistance
    30 MOhms
  • Capacitance
    300 pF
  • Dark Current
    50 nA
  • Responsivity/Photosensitivity
    0.9 to 1 A/W
  • Rise Time
    33 ns
  • Note
    Linearity: 6 dBm

Physical Properties

  • Active Area
    2 x 2 mm2

Temperature

  • Operating Temperature display
    -40 to 85 Degree C
  • Storage Temperature
    -40 to 125 Degree C

Technical Documents

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