IAV200

Photodiode by GPD Optoelectronics

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The IAV200 from GPD Optoelectronics is a Photodiode with Wavelength Range 1 to 1.63 µm, Bandwidth 0.5 to 2 GHz, Capacitance 1.8 to 2.2 pF, Dark Current 8 to 25 nA, Responsivity/Photosensitivity 0.85 to 1.05 A/W. More details for IAV200 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IAV200
  • Manufacturer
    GPD Optoelectronics

Applications

  • Application
    Free Space Optics (FSO), LIDAR/LADAR, High Sensitivity Photometry, Optical Communications, Optical Time Domain Reflectometer (OTDR)

General Parameters

  • Breakdown Voltage
    50 to 75 V
  • Configuration
    Single
  • Channels
    Single)
  • Forward Current
    10 mA
  • Module
    No
  • Noise equivalent power(NEP) :
    3.2 to 100 W/Hz
  • Package
    TO-46
  • Package Type
    TO-Can
  • Photodetector Type
    Avalanche
  • Operation Mode
    Photoconductive
  • Wavelength Range
    1 to 1.63 µm
  • Photodiode Material
    InGaAs
  • Power Dissipation
    1 mW
  • Reverse Current
    1 mA
  • Bandwidth
    0.5 to 2 GHz
  • Capacitance
    1.8 to 2.2 pF
  • Dark Current
    8 to 25 nA
  • Responsivity/Photosensitivity
    0.85 to 1.05 A/W

Physical Properties

  • Active Area
    200 x 200 µm2

Temperature

  • Operating Temperature display
    -40 to 70 Degree C
  • Storage Temperature
    -40 to 85 Degree C
  • Temperature Coefficient
    0.75 to 0.08 V/°C

Technical Documents

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