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G12183-110K

Photodiode by Hamamatsu Photonics
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The G12183-110K from Hamamatsu Photonics is a Photodiode with Wavelength Range 0.9 to 2.57 µm, Capacitance 440 to 1000 pF, Dark Current 0.9 to 9 µA, Responsivity/Photosensitivity 1 to 1.3 A/W, Active Area Diameter 1 mm. More details for G12183-110K can be seen below.

Product Specifications

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Product Details

  • Part Number
    G12183-110K
  • Manufacturer
    Hamamatsu Photonics
  • Description
    InGaAs PIN photodiode from 0.9 to 2.57 µm

Applications

  • Application
    Optical power meters, Gas analysis, Moisture meters, NIR (near infrared) photometry

General Parameters

  • Configuration
    Single
  • Cut-Off Frequency
    2 to 7 MHz
  • Detectivity
    1 x 1011 cm x Hz/W to 3 x 1011 cm x Hz/W
  • Module
    No
  • Noise equivalent power(NEP) :
    2.5 x 10-13 W/Hz to 8 x 10-13 W/Hz
  • Package
    TO-8
  • Package Type
    TO-Can
  • Photodetector Type
    PIN
  • Operation Mode
    Photovoltaic
  • Wavelength Range
    0.9 to 2.57 µm
  • Photodiode Material
    Indium Gallium Arsenide (InGaAs)
  • Power Dissipation
    0.2 mW
  • Reverse Voltage
    1 V
  • Shunt Resistance
    28 to 140 kOhms
  • Spectral Band
    NIR
  • Capacitance
    440 to 1000 pF
  • Dark Current
    0.9 to 9 µA
  • Responsivity/Photosensitivity
    1 to 1.3 A/W

Physical Properties

  • Window Material
    Borosilicate glass
  • Active Area Diameter
    1 mm

Temperature

  • Operating Temperature display
    -40 to 70 Degree C
  • Storage Temperature
    -55 to 85 Degree C
  • Temperature Coefficient
    1.035 times/Degree C

Technical Documents
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