G12430-032D

Photodiode by Hamamatsu Photonics

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The G12430-032D from Hamamatsu Photonics is a Photodiode with Wavelength Range 0.9 to 1.7 µm, Capacitance 35 to 60 pF, Dark Current 250 to 1250 pA, Responsivity/Photosensitivity 0.85 to 0.95 A/W. More details for G12430-032D can be seen below.

Product Specifications

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Product Details

  • Part Number
    G12430-032D
  • Manufacturer
    Hamamatsu Photonics
  • Description
    InGaAs PIN photodiode from 0.9 to 1.7 µm

Applications

  • Application
    NIR spectrophotometers

General Parameters

  • Configuration
    Array
  • Channels
    Multiple (32 Channels)
  • Cut-Off Frequency
    25 to 60 MHz
  • Detectivity
    1 x 1012 cm x Hz/W to 5 x 1012 cm x Hz/W
  • Module
    No
  • Noise equivalent power(NEP) :
    1 x 10-14 W/Hz to 3 x 10-14 W/Hz
  • Package
    40 pin DIP, ceramic
  • Package Type
    Ceramic, DIP
  • Photodetector Type
    PIN
  • Operation Mode
    Photoconductive
  • Wavelength Range
    0.9 to 1.7 µm
  • Photodiode Material
    Indium Gallium Arsenide (InGaAs)
  • Reverse Voltage
    5 V
  • Shunt Resistance
    40 to 200 MOhms
  • Spectral Band
    NIR
  • Capacitance
    35 to 60 pF
  • Dark Current
    250 to 1250 pA
  • Responsivity/Photosensitivity
    0.85 to 0.95 A/W

Physical Properties

  • Active Area
    0.2 x 1 mm
  • Window Material
    Borosilicate glass

Temperature

  • Operating Temperature display
    -20 to 70 Degree C
  • Storage Temperature
    -20 to 85 Degree C
  • Temperature Coefficient
    1.1 times/Degree C

Technical Documents

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