G8909-01

Photodiode by Hamamatsu Photonics

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The G8909-01 from Hamamatsu Photonics is a Photodiode with Wavelength Range 0.9 to 1.7 µm, Capacitance 1.4 pF, Dark Current 0.02 to 0.2 nA, Responsivity/Photosensitivity 0.8 to 0.95 A/W, Active Area Diameter 0.08 mm. More details for G8909-01 can be seen below.

Product Specifications

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Product Details

  • Part Number
    G8909-01
  • Manufacturer
    Hamamatsu Photonics
  • Description
    InGaAs PIN photodiode from 0.9 to 1.7 µm

Applications

  • Application
    DWDM monitor with AWG

General Parameters

  • Configuration
    Single
  • Module
    No
  • Package
    Ceramic, Surface Mount
  • Package Type
    Ceramic, Surface Mount
  • Photodetector Type
    PIN
  • Operation Mode
    Photoconductive
  • Wavelength Range
    0.9 to 1.7 µm
  • Photodiode Material
    Indium Gallium Arsenide (InGaAs)
  • Reverse Voltage
    6 V
  • Shunt Resistance
    8 GOhms
  • Spectral Band
    NIR
  • Capacitance
    1.4 pF
  • Dark Current
    0.02 to 0.2 nA
  • Responsivity/Photosensitivity
    0.8 to 0.95 A/W

Physical Properties

  • No. of Elements
    40 ch
  • Active Area Diameter
    0.08 mm

Temperature

  • Operating Temperature display
    -40 to 85 Degree C
  • Storage Temperature
    -40 to 85 Degree C

Technical Documents

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