S12060-10

Photodiode by Hamamatsu Photonics

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The S12060-10 from Hamamatsu Photonics is a Photodiode with Wavelength Range 400 to 1000 nm, Capacitance 6 pF, Dark Current 0.2 to 2 nA, Responsivity/Photosensitivity 0.5 A/W, Active Area Diameter 1 mm (Photosensitive). More details for S12060-10 can be seen below.

Product Specifications

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Product Details

  • Part Number
    S12060-10
  • Manufacturer
    Hamamatsu Photonics
  • Description
    400 to 1000 nm VIS-NIR TO-18 Silicon Photoconductive Photodiode

Applications

  • Application
    Optical rangefinders, FSO, Optical fiber communications

General Parameters

  • Breakdown Voltage
    200 to 300 V
  • Configuration
    Single
  • Channels
    Single
  • Package
    TO-18
  • Package Type
    TO-Can
  • Photodetector Type
    Avalanche
  • Operation Mode
    Photoconductive
  • Wavelength Range
    400 to 1000 nm
  • Photodiode Material
    Silicon (Si)
  • Spectral Band
    Visible, Near-Infrared
  • Capacitance
    6 pF
  • Dark Current
    0.2 to 2 nA
  • Responsivity/Photosensitivity
    0.5 A/W

Physical Properties

  • Window Material
    Borosilicate glass
  • Active Area Diameter
    1 mm (Photosensitive)

Temperature

  • Operating Temperature display
    -40 to 85 Degree C
  • Storage Temperature
    -55 to 125 Degree C
  • Temperature Coefficient
    0.4 V/Degree C

Technical Documents

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