S13337-01

Photodiode by Hamamatsu Photonics

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The S13337-01 from Hamamatsu Photonics is a Photodiode with Wavelength Range 320 to 1000 nm, Capacitance 3 pF, Dark Current 3 to 500 pA, Responsivity/Photosensitivity 500 to 570 mA/W, Active Area Diameter 0.8 mm. More details for S13337-01 can be seen below.

Product Specifications

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Product Details

  • Part Number
    S13337-01
  • Manufacturer
    Hamamatsu Photonics
  • Description
    Silicon PIN photodiode from 320 to 1000 nm

Applications

  • Application
    LD monitor, Optical measurement equipment

General Parameters

  • Configuration
    Single
  • Cut-Off Frequency
    500 MHz
  • Module
    No
  • Noise equivalent power(NEP) :
    3.1 x 10-15 W/Hz
  • Package
    Surface Mount, Ceramic
  • Package Type
    Surface Mount, Ceramic
  • Photodetector Type
    PIN
  • Operation Mode
    Photoconductive
  • Wavelength Range
    320 to 1000 nm
  • Photodiode Material
    Silicon (Si)
  • Reverse Voltage
    20 V
  • Spectral Band
    UV-VIS-NIR
  • Capacitance
    3 pF
  • Dark Current
    3 to 500 pA
  • Responsivity/Photosensitivity
    500 to 570 mA/W

Physical Properties

  • Window Material
    Borosilicate glass
  • Active Area Diameter
    0.8 mm

Temperature

  • Operating Temperature display
    -25 to 85 Degree C
  • Storage Temperature
    -40 to 100 Degree C
  • Temperature Coefficient
    1.15 times/Degree C

Technical Documents

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