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S1337-1010BQ

Photodiode by Hamamatsu Photonics
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The S1337-1010BQ from Hamamatsu Photonics is a Photodiode with Wavelength Range 190 to 1100 nm, Capacitance 1100 pF, Dark Current 200 pA, Responsivity/Photosensitivity 0.1 to 0.5 A/W, Rise Time 3 µs. More details for S1337-1010BQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    S1337-1010BQ
  • Manufacturer
    Hamamatsu Photonics
  • Description
    Ceramic Silicon photodiode from 190 to 1100 nm

Applications

  • Application
    Analytical Equipment, Optical Measurement Equipments

General Parameters

  • Configuration
    Single
  • Module
    No
  • Noise equivalent power(NEP) :
    1.8 x 10-14 W/Hz
  • Package
    Ceramic
  • Package Type
    Ceramic
  • Operation Mode
    Photoconductive
  • Wavelength Range
    190 to 1100 nm
  • Photodiode Material
    Silicon (Si)
  • Reverse Voltage
    5 V
  • Short Circuit Current
    65 to 78 µA
  • Shunt Resistance
    0.05 to 0.2 GOhms
  • Spectral Band
    UV-VIS-NIR
  • Capacitance
    1100 pF
  • Dark Current
    200 pA
  • Responsivity/Photosensitivity
    0.1 to 0.5 A/W
  • Rise Time
    3 µs

Physical Properties

  • Active Area
    10 x 10 mm
  • Window Material
    Quartz

Temperature

  • Operating Temperature display
    -20 to 60 Degree C
  • Storage Temperature
    -20 to 80 Degree C
  • Temperature Coefficient
    1.15 times/Degree C

Technical Documents
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