S13957-01

Photodiode by Hamamatsu Photonics

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The S13957-01 from Hamamatsu Photonics is a Photodiode with Wavelength Range 400 to 1100 nm, Capacitance 230 to 350 pF, Dark Current 40 to 1000 pA, Responsivity/Photosensitivity 0.38 to 0.61 A/W, Rise Time 15 µs. More details for S13957-01 can be seen below.

Product Specifications

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Product Details

  • Part Number
    S13957-01
  • Manufacturer
    Hamamatsu Photonics
  • Description
    Ceramic Silicon photodiode from 400 to 1100 nm

Applications

  • Application
    General industrial measurement, X-ray test equipment

General Parameters

  • Configuration
    Single
  • Module
    No
  • Package
    Glass epoxy
  • Package Type
    Ceramic
  • Operation Mode
    Photoconductive
  • Wavelength Range
    400 to 1100 nm
  • Photodiode Material
    Silicon (Si)
  • Reverse Voltage
    10 V
  • Short Circuit Current
    18 to 22 µA
  • Capacitance
    230 to 350 pF
  • Dark Current
    40 to 1000 pA
  • Responsivity/Photosensitivity
    0.38 to 0.61 A/W
  • Rise Time
    15 µs

Physical Properties

  • Active Area
    4.5 x 4.5 mm
  • Window Material
    Glass epoxy

Temperature

  • Operating Temperature display
    -20 to 60 Degree C
  • Storage Temperature
    -20 to 80 Degree C

Technical Documents

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