S16008-66

Photodiode by Hamamatsu Photonics

Note: Your Quotation Request will be directed to Hamamatsu Photonics.

The S16008-66 from Hamamatsu Photonics is a Photodiode with Wavelength Range 380 to 1100 nm, Capacitance 4 to 5 pF, Dark Current 0.1 to 50 pA, Responsivity/Photosensitivity 640 mA/W, Rise Time 9 µs. More details for S16008-66 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    S16008-66
  • Manufacturer
    Hamamatsu Photonics
  • Description
    Surface Mount Silicon photodiode from 380 to 1100 nm

Applications

  • Application
    Analytical instrument, Optical measurement equipmen, PCR testing equipment

General Parameters

  • Configuration
    Single
  • Module
    No
  • Noise equivalent power(NEP) :
    2 x 10-15 W/Hz
  • Package
    Surface Mount
  • Package Type
    Surface Mount
  • Operation Mode
    Photoconductive
  • Wavelength Range
    380 to 1100 nm
  • Photodiode Material
    Silicon (Si)
  • Reverse Voltage
    30 V
  • Shunt Resistance
    0.2 to 10 GOhms
  • Spectral Band
    VIS-NIR
  • Capacitance
    4 to 5 pF
  • Dark Current
    0.1 to 50 pA
  • Responsivity/Photosensitivity
    640 mA/W
  • Rise Time
    9 µs

Physical Properties

  • Active Area
    5.8 x 5.8 mm
  • Window Material
    Silicone resin

Temperature

  • Operating Temperature display
    -40 to 100 Degree C
  • Storage Temperature
    -40 to 100 Degree C
  • Temperature Coefficient
    1.12 times/Degree C

Technical Documents

Click to view more product details on manufacturer's website

PCB Directory Magazine

Request a Quote