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The S16840-02MS from Hamamatsu Photonics is a Photodiode with Wavelength Range 320 to 1100 nm, Capacitance 200 pF, Dark Current 10 pA, Responsivity/Photosensitivity 0.33 to 0.58 A/W, Rise Time 0.5 µs. More details for S16840-02MS can be seen below.
850 nm Silicon Photodiode for Pulse Detector Applications
TRUMPF, a global leader in VCSEL and photodiode solutions for data communication, has improved its proprietary subwavelength surface grating technology for datacom VCSELs. Subwavelength grating technology leads to better relative intensity noise (RIN) performance, reduces sensitivity against optical feedback and avoids polarization flips. As a result, the signal quality in a complex optical link is improved and enables higher data rates without changing the light current voltage (LIV) characteristics. This breakthrough technology with its benefits works for all offered wavelengths... read more
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