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S2833-04

Photodiode by Hamamatsu Photonics
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The S2833-04 from Hamamatsu Photonics is a Photodiode with Wavelength Range 320 to 1100 nm, Capacitance 700 pF, Dark Current 10 pA, Responsivity/Photosensitivity 0.33 to 0.58 A/W, Rise Time 2.5 µs. More details for S2833-04 can be seen below.

Product Specifications

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Product Details

  • Part Number
    S2833-04
  • Manufacturer
    Hamamatsu Photonics
  • Description
    DIP Silicon photodiode from 320 to 1100 nm

Applications

  • Application
    Exposure meters, Illuminometers, Stroboscope light control, Copier, Display light control, Optical switches

General Parameters

  • Configuration
    Single
  • Module
    No
  • Package
    DIP
  • Package Type
    DIP
  • Operation Mode
    Photoconductive
  • Wavelength Range
    320 to 1100 nm
  • Photodiode Material
    Silicon (Si)
  • Reverse Voltage
    10 V
  • Short Circuit Current
    6.50 µA
  • Shunt Resistance
    10 to 100 GOhms
  • Spectral Band
    VIS-NIR
  • Capacitance
    700 pF
  • Dark Current
    10 pA
  • Responsivity/Photosensitivity
    0.33 to 0.58 A/W
  • Rise Time
    2.5 µs

Physical Properties

  • Active Area
    2.4 x 2.8 mm

Temperature

  • Operating Temperature display
    -25 to 85 Degree C
  • Storage Temperature
    -40 to 100 Degree C
  • Temperature Coefficient
    1.12 times/Degree C

Technical Documents
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