S3584-09

Photodiode by Hamamatsu Photonics

Note: Your Quotation Request will be directed to Hamamatsu Photonics.

The S3584-09 from Hamamatsu Photonics is a Photodiode with Wavelength Range 340 to 1100 nm, Capacitance 300 pF, Dark Current 10 to 30 nA, Responsivity/Photosensitivity 0.22 to 0.66 A/W. More details for S3584-09 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    S3584-09
  • Manufacturer
    Hamamatsu Photonics
  • Description
    Silicon PIN photodiode from 340 to 1100 nm

Applications

  • Application
    Scintillation detectors, Hodoscopes, TOF counters

General Parameters

  • Configuration
    Single
  • Cut-Off Frequency
    10 MHz
  • Module
    No
  • Noise equivalent power(NEP) :
    8.6 x 10-14 W/Hz
  • Package
    Ceramic
  • Package Type
    Ceramic
  • Photodetector Type
    PIN
  • Operation Mode
    Photoconductive
  • Wavelength Range
    340 to 1100 nm
  • Photodiode Material
    Silicon (Si)
  • Power Dissipation
    100 mW
  • Reverse Voltage
    100 V
  • Short Circuit Current
    730 µA
  • Capacitance
    300 pF
  • Dark Current
    10 to 30 nA
  • Responsivity/Photosensitivity
    0.22 to 0.66 A/W

Physical Properties

  • Active Area
    28 x 28 mm
  • Window Material
    Unsealed

Temperature

  • Operating Temperature display
    -20 to 60 Degree C
  • Storage Temperature
    -20 to 80 Degree C
  • Temperature Coefficient
    1.12 times/Degree C

Technical Documents

Click to view more product details on manufacturer's website
Request a Quote