FCI-InGaAs-400WCER

Photodiode by OSI Optoelectronics

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The FCI-InGaAs-400WCER from OSI Optoelectronics is a Photodiode with Wavelength Range 900 to 1700 nm, Capacitance 14 pF, Dark Current 0.4 to 5 nA, Responsivity/Photosensitivity 0.80 to 0.95 A/W, Rise Time 3 ns. More details for FCI-InGaAs-400WCER can be seen below.

Product Specifications

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Product Details

  • Part Number
    FCI-InGaAs-400WCER
  • Manufacturer
    OSI Optoelectronics
  • Description
    High Speed InGaAs Photodiodes Mounted on Wraparound Ceramic

Applications

  • Application
    High Speed Optical Communications, Gigabit Ethernet/Fibre Channel, SONET / SDH, ATM, Diode Laser Monitor, Instrumentation

General Parameters

  • Channels
    Single
  • Forward Current
    8 mA
  • Module
    No
  • Noise equivalent power(NEP) :
    7.69 e-15 W/vHz
  • Package
    Ceramic
  • Package Type
    Ceramic
  • Operation Mode
    Photoconductive
  • Wavelength Range
    900 to 1700 nm
  • Photodiode Material
    InGaAs
  • Reverse Current
    2 mA
  • Reverse Voltage
    15 V
  • Capacitance
    14 pF
  • Dark Current
    0.4 to 5 nA
  • Responsivity/Photosensitivity
    0.80 to 0.95 A/W
  • Rise Time
    3 ns

Physical Properties

  • Active Area
    0.4 mm x 0.4 mm

Temperature

  • Operating Temperature display
    0 to 70 Degree C
  • Storage Temperature
    -40 to 85 Degree C

Technical Documents

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