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The OSD100-5TA from OSI Optoelectronics is a Photodiode with Wavelength Range 436 nm, Capacitance 2500 pF, Dark Current 30 nA, Responsivity/Photosensitivity 0.18 to 0.21 A/W, Rise Time 45 µs. More details for OSD100-5TA can be seen below.
850 nm Silicon Photodiode for Pulse Detector Applications
TRUMPF, a global leader in VCSEL and photodiode solutions for data communication, has improved its proprietary subwavelength surface grating technology for datacom VCSELs. Subwavelength grating technology leads to better relative intensity noise (RIN) performance, reduces sensitivity against optical feedback and avoids polarization flips. As a result, the signal quality in a complex optical link is improved and enables higher data rates without changing the light current voltage (LIV) characteristics. This breakthrough technology with its benefits works for all offered wavelengths... read more
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