OSD3-E

Photodiode by OSI Optoelectronics

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The OSD3-E from OSI Optoelectronics is a Photodiode with Wavelength Range 550 nm, Capacitance 20 to 80 pF, Dark Current 0.5 to 2 nA. More details for OSD3-E can be seen below.

Product Specifications

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Product Details

  • Part Number
    OSD3-E
  • Manufacturer
    OSI Optoelectronics
  • Description
    Series E Eye Response Detectors

Applications

  • Application
    Photometry/Radiometry, Medical Instrumentation, Analytical Chemistry

General Parameters

  • Configuration
    Single
  • Channels
    Single
  • Module
    No
  • Noise equivalent power(NEP) :
    1.8 e-14 W/vHz
  • Package
    TO-18
  • Package Type
    TO-Can
  • Operation Mode
    Photoconductive
  • Wavelength Range
    550 nm
  • Photodiode Material
    Silicon
  • Reverse Voltage
    15 V
  • RoHs
    Yes
  • Shunt Resistance
    700 MOhm
  • Capacitance
    20 to 80 pF
  • Dark Current
    0.5 to 2 nA
  • Note
    Photosensitivity: 6.6 nA /Lux

Physical Properties

  • Active Area
    3 mm
  • Dimensions
    Active Area Dimensions: 2.5 x 1.2 mm

Temperature

  • Operating Temperature display
    -25 to 85 Degree C
  • Storage Temperature
    -40 to 120 Degree C

Technical Documents

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