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PIN-DSIn

Photodiode by OSI Optoelectronics
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The PIN-DSIn from OSI Optoelectronics is a Photodiode with Wavelength Range 400 to 1100 nm (Silicon)/1000 to 1800 nm (InGaAs), Capacitance 450 pF (Silicon)/300 pF (InGaAs), Responsivity/Photosensitivity 0.55 A/W (Silicon)/0.6 A/W (InGaAs), Rise Time 4 µs (Silicon)/4 µs (InGaAs), Active Area Diameter 2.54 mm (Silicon)/1.5 mm (InGaAs). More details for PIN-DSIn can be seen below.

Product Specifications

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Product Details

  • Part Number
    PIN-DSIn
  • Manufacturer
    OSI Optoelectronics
  • Description
    Silicon/InGaAs PIN photodiode from 400 to 1800 nm

Applications

  • Application
    Flame Temperature Sensing, Spectrophotometer, Dual-wavelength Detection, IR Thermometers for Heat Treating, Induction Heating

General Parameters

  • Configuration
    Single
  • Module
    No
  • Noise equivalent power(NEP) :
    0.000000000000019 W/vHz (Silicon)/0.00000000000021 W/vHz (InGaAs)
  • Package
    TO-5
  • Package Type
    TO-Can
  • Photodetector Type
    PIN
  • Operation Mode
    Photoconductive
  • Wavelength Range
    400 to 1100 nm (Silicon)/1000 to 1800 nm (InGaAs)
  • Photodiode Material
    Silicon, InGaAs
  • Reverse Voltage
    5 V (Silicon)/2 V (InGaAs)
  • RoHs
    Yes
  • Shunt Resistance
    150 MOhms (Silicon)1 MOhms (InGaAs)
  • Capacitance
    450 pF (Silicon)/300 pF (InGaAs)
  • Responsivity/Photosensitivity
    0.55 A/W (Silicon)/0.6 A/W (InGaAs)
  • Rise Time
    4 µs (Silicon)/4 µs (InGaAs)

Physical Properties

  • Active Area Diameter
    2.54 mm (Silicon)/1.5 mm (InGaAs)

Temperature

  • Operating Temperature display
    -40 to 100 Degree C
  • Storage Temperature
    -55 to 125 Degree C

Technical Documents
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