OSA9-3-IC

Photodiode by OTRON

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The OSA9-3-IC from OTRON is a Photodiode with Wavelength Range 400 to 1100 nm, Capacitance 8.2 to 33 pF, Dark Current 50 to 860 pA, Responsivity/Photosensitivity 0.38 to 0.64 A/W. More details for OSA9-3-IC can be seen below.

Product Specifications

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Product Details

  • Part Number
    OSA9-3-IC
  • Manufacturer
    OTRON
  • Description
    Silicon PIN Photodiode Array

Applications

  • Application
    optical switcher, pulse laser detector, Automatic sensor, Industry machine

General Parameters

  • Configuration
    Array
  • Channels
    Single
  • Detectivity
    2.07 x 1013 cm(Hz/W)1/
  • Module
    No
  • Noise equivalent power(NEP) :
    2.59 x 10 -14 W/Hz 1/2
  • Package
    Ceramic Stem
  • Package Type
    Ceramic
  • Photodetector Type
    PIN
  • Operation Mode
    Photoconductive
  • Wavelength Range
    400 to 1100 nm
  • Photodiode Material
    Silicon
  • Reverse Bias Voltage
    33 V
  • Reverse Voltage
    33 V
  • RoHs
    Yes
  • Short Circuit Current
    42 µA
  • Shunt Resistance
    0.2 GOhms
  • Capacitance
    8.2 to 33 pF
  • Dark Current
    50 to 860 pA
  • Responsivity/Photosensitivity
    0.38 to 0.64 A/W
  • Note
    344 mV(open circuit voltage)

Physical Properties

  • Active Area
    2.675 x 2.675 x 3 mm2

Temperature

  • Operating Temperature display
    -40 to 100 Degree C
  • Storage Temperature
    -40 to 100 Degree C
  • Temperature Coefficient
    0.18 times/Degree C

Technical Documents

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