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OSD4-IPT

Photodiode by OTRON
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The OSD4-IPT from OTRON is a Photodiode with Wavelength Range 400 to 1100 nm, Capacitance 4 to 14 pF, Dark Current 60 to 160 pA, Responsivity/Photosensitivity 0.38 to 0.64 A/W, Rise Time 30 ns. More details for OSD4-IPT can be seen below.

Product Specifications

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Product Details

  • Part Number
    OSD4-IPT
  • Manufacturer
    OTRON
  • Description
    Silicon PIN Photodiode

Applications

  • Application
    Analytical instruments, Precision photometry, IR/ Laser light Monitoring, Optical measurement equipment, Medical equipment, Optical switch

General Parameters

  • Configuration
    Single
  • Channels
    Single
  • Detectivity
    1.80 x 1013 cm(Hz/W)1/2
  • Module
    No
  • Noise equivalent power(NEP) :
    1.11 x 10 -14 W/Hz 1/2
  • Package
    TO-18
  • Package Type
    TO-Can
  • Photodetector Type
    PIN
  • Operation Mode
    Photoconductive
  • Wavelength Range
    400 to 1100 nm
  • Photodiode Material
    Silicon
  • Reverse Bias Voltage
    20 V
  • Reverse Voltage
    20 V
  • RoHs
    Yes
  • Short Circuit Current
    66 µA
  • Shunt Resistance
    0.2 GOhms
  • Capacitance
    4 to 14 pF
  • Dark Current
    60 to 160 pA
  • Responsivity/Photosensitivity
    0.38 to 0.64 A/W
  • Rise Time
    30 ns
  • Note
    358 mV(open circuit voltage)

Physical Properties

  • Active Area
    2 x 2 mm2

Temperature

  • Operating Temperature display
    -40 to 80 Degree C
  • Storage Temperature
    -40 to 100 Degree C
  • Temperature Coefficient
    0.18 times/Degree C

Technical Documents
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