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The OSD5870 from OTRON is a Photodiode with Wavelength Range 400 to 1100 nm, Capacitance 25 to 128 pF, Dark Current 1 to 5 nA, Responsivity/Photosensitivity 0.38 to 0.64 A/W, Rise Time 500 ns. More details for OSD5870 can be seen below.
850 nm Silicon Photodiode for Pulse Detector Applications
The Centre for Quantum Science and Technology (IQST) at the Universities of Stuttgart and Ulm and the Max Planck Institute for Solid State Research (MPI-FKF) continue to lead interdisciplinary research in quantum science and technology, marking a decade of innovation. Its mission extends beyond basic research to focus on potential applications and their benefits for society. With the Karlsruhe Institute of Technology (KIT), a further supra-regional institution has now joined the world-renowned centre, marking a significant step towards a state-wide network for the scientific "quantum community" in Baden-Württemberg... read more
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