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T1120P

Photodiode by Vishay Intertechnology
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The T1120P from Vishay Intertechnology is a Photodiode with Wavelength Range 430 to 1100 nm, Capacitance 17 to 48 pF, Dark Current 2 to 5 nA, Rise Time 100 ns. More details for T1120P can be seen below.

Product Specifications

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Product Details

  • Part Number
    T1120P
  • Manufacturer
    Vishay Intertechnology
  • Description
    Silicon PIN Photodiode from 430 to 1100 nm

Applications

  • Application
    High speed photo detector

General Parameters

  • Breakdown Voltage
    60 V
  • Configuration
    Single
  • Detector Sensitivity :
    ±60 Degree (Angle of half sensitivity)
  • Fall Time
    100 ns
  • Forward Voltage
    1 to 1.3 V
  • Module
    No
  • Noise equivalent power(NEP) :
    4 x 10-14 W/vHz
  • Package
    Chip
  • Package Type
    Chip
  • Photodetector Type
    PIN
  • Operation Mode
    Photoconductive
  • Wavelength Range
    430 to 1100 nm
  • Photodiode Material
    Silicon
  • Reverse Current
    25 to 35 µA
  • Reverse Voltage
    60 V
  • Rise/Fall Time
    100 ns
  • RoHs
    Yes
  • Short Circuit Current
    32 µA
  • Spectral Band
    VIS-NIR
  • Capacitance
    17 to 48 pF
  • Dark Current
    2 to 5 nA
  • Rise Time
    100 ns
  • Note
    Open circuit Voltage: 350 mV

Physical Properties

  • Active Area
    4.4 mm2
  • Dimensions
    2.37 x 2.37 x 0.28 mm (L x W x H)

Temperature

  • Operating Temperature display
    -40 to 100 Degree C
  • Storage Temperature
    -40 to 100 Degree C
  • Temperature Coefficient
    0.1 %/K

Technical Documents
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