T1170P

Photodiode by Vishay Intertechnology

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The T1170P from Vishay Intertechnology is a Photodiode with Wavelength Range 600 to 1040 nm, Capacitance 4 to 12 pF, Dark Current <1 to 3 nA, Rise Time 100 ns. More details for T1170P can be seen below.

Product Specifications

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Product Details

  • Part Number
    T1170P
  • Manufacturer
    Vishay Intertechnology
  • Description
    Silicon PIN Photodiode from 600 to 1040 nm

Applications

  • Application
    High speed photo detector

General Parameters

  • Breakdown Voltage
    60 V
  • Configuration
    Single
  • Detector Sensitivity :
    ±60 Degree (Angle of half sensitivity)
  • Fall Time
    100 ns
  • Module
    No
  • Package
    TO-18, Chip
  • Package Type
    Chip, TO-Can
  • Photodetector Type
    PIN
  • Operation Mode
    Photoconductive
  • Wavelength Range
    600 to 1040 nm
  • Photodiode Material
    Silicon
  • Reverse Current
    7 µA
  • Reverse Voltage
    60 V
  • Rise/Fall Time
    100 ns
  • RoHs
    Yes
  • Spectral Band
    VIS-NIR
  • Capacitance
    4 to 12 pF
  • Dark Current
    <1 to 3 nA
  • Rise Time
    100 ns

Physical Properties

  • Active Area
    0.88 mm2
  • Dimensions
    1.17 x 1.17 x 0.28 mm (L x W x H)

Temperature

  • Operating Temperature display
    -40 to 100 Degree C
  • Storage Temperature
    -40 to 100 Degree C

Technical Documents

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