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T1180P6

Photodiode by Vishay Intertechnology
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The T1180P6 from Vishay Intertechnology is a Photodiode with Wavelength Range 590 to 1010 nm, Capacitance 1.1 to 1.7 pF, Dark Current <1 to 3 nA, Rise Time 530 to 1480 ns. More details for T1180P6 can be seen below.

Product Specifications

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Product Details

  • Part Number
    T1180P6
  • Manufacturer
    Vishay Intertechnology
  • Description
    Silicon PIN Photodiode from 590 to 1010 nm

Applications

  • Application
    High speed photo detector

General Parameters

  • Breakdown Voltage
    60 V
  • Configuration
    Single
  • Detector Sensitivity :
    ±60 Degree (Angle of half sensitivity)
  • Fall Time
    170 to 590 ns
  • Module
    No
  • Package
    Chip
  • Package Type
    Chip
  • Photodetector Type
    PIN
  • Operation Mode
    Photoconductive
  • Wavelength Range
    590 to 1010 nm
  • Photodiode Material
    Silicon
  • Reverse Current
    0.59 to 0.67 µA
  • Reverse Voltage
    60 V
  • Rise/Fall Time
    170 to 590 ns (Fall), 530 to 1480 ns (Rise)
  • RoHs
    Yes
  • Spectral Band
    VIS-NIR
  • Capacitance
    1.1 to 1.7 pF
  • Dark Current
    <1 to 3 nA
  • Rise Time
    530 to 1480 ns

Physical Properties

  • Active Area
    0.055 mm2
  • Dimensions
    0.67 x 0.3 x 0.28 mm (L x W x H)

Temperature

  • Operating Temperature display
    -40 to 100 Degree C
  • Storage Temperature
    -40 to 100 Degree C

Technical Documents
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