PT5529B/L2/H2-F

Phototransistor by EVERLIGHT Electronics

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The PT5529B/L2/H2-F from EVERLIGHT Electronics is a Phototransistor with Collector Emitter Voltage (Breakdown) 5 V, Collector-Dark Current 100 nA, Collector Emitter Voltage(Saturation) 0.4 V, Emitter Collector Voltage(Breakdown) 30 V, Power Dissipation 75 mW. More details for PT5529B/L2/H2-F can be seen below.

Product Specifications

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Product Details

  • Part Number
    PT5529B/L2/H2-F
  • Manufacturer
    EVERLIGHT Electronics
  • Description
    Side Face Silicon Phototransistor

Applications

  • Application
    Mouse, Optoelectronic Switch, Photo Interrupter

General Parameters

  • Fall Time
    15 us
  • Material
    Silicon
  • Mounting Type
    Through-Hole
  • Package
    Rectangle
  • Peak Wavelength Sensitivity
    940 nm
  • Phototransistor Type
    Phototransistor
  • Rise Time
    15 us
  • RoHs
    Yes
  • Collector Emitter Voltage (Breakdown)
    5 V
  • Collector-Dark Current
    100 nA
  • Collector Emitter Voltage(Saturation)
    0.4 V
  • Emitter Collector Voltage(Breakdown)
    30 V
  • Power Dissipation :
    75 mW
  • Wavelength(Spectral Sensitivity)
    940 nm
  • Note
    Spectrum Band: Infrared, Lens Color: Black, Soldering Time: 5 sec, Spectral Bandwidth: 760 to 1100 nm

Temperature

  • Lead Soldering Temperature
    260 Degree C
  • Operating Temperature display
    -40 to 85 Degree C
  • Storage Temperature
    -40 to 100 Degree C

Technical Documents

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