MTD8000M3B-T

Phototransistor by Marktech Optoelectronics

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The MTD8000M3B-T from Marktech Optoelectronics is a Silicon Phototransistor that has a peak sensitivity wavelength of 880 nm. It has a spectral sensitivity of 400 nm - 1100 nm and switching time (rise/fall) of 10 µs. This phototransistor has a collector-emitter current of 1 mA and maximum collector dark current of 100 nA. It has a collector-emitter saturation voltage of 0.2 V and an angular response of ± 80 deg. This phototransistor is available in a compact ceramic package that measures 19 (L) mm x 3 (Ø) mm and is ideal for optical switches, optical sensors & optical detectors.

Product Specifications

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Product Details

  • Part Number
    MTD8000M3B-T
  • Manufacturer
    Marktech Optoelectronics
  • Description
    880 nm Silicon Phototransistor for Optical Switches & Detectors

Applications

  • Application
    Optical Switches, Optical Sensors, Optical Detectors

General Parameters

  • Collector Current
    30 mA
  • Collector Emitter Current
    1 mA
  • Collector-Light Current
    1 mA
  • Fall Time
    10 µS
  • Material
    Metal
  • Mounting Type
    Through-Hole
  • Package
    3mm Ceramic
  • Peak Wavelength Sensitivity
    880 nm
  • Phototransistor Type
    Photo Transistor
  • Rise Time
    10 µS
  • RoHs
    Yes
  • Collector Emitter Voltage (Breakdown)
    20 V
  • Collector-Dark Current
    100 nA
  • Collector Emitter Voltage(Saturation)
    0.2 V
  • Emitter Collector Voltage(Breakdown)
    5 V
  • Power Dissipation :
    80 mW
  • Wavelength(Spectral Sensitivity)
    400 to 1100 nm

Temperature

  • Junction Temperature
    100 Degree C
  • Lead Soldering Temperature
    260 Degree C
  • Operating Temperature display
    -25 to 85 Degree C
  • Storage Temperature
    -30 to 100 Degree C

Technical Documents

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