NTE3039

Phototransistor by NTE Electronics, Inc

Note: Your Quotation Request will be directed to NTE Electronics, Inc.

The NTE3039 from NTE Electronics, Inc is a Phototransistor with Collector Emitter Voltage (Breakdown) 30 V, Collector-Dark Current 100 nA, Collector Emitter Voltage(Saturation) 0.4 V, Emitter Collector Voltage(Breakdown) 30 V, Power Dissipation 70 mW. More details for NTE3039 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    NTE3039
  • Manufacturer
    NTE Electronics, Inc

General Parameters

  • Collector-Light Current
    7 to 14 mA
  • Fall Time
    15 us
  • Material
    Silicon
  • Mounting Type
    Through-Hole
  • Phototransistor Type
    Photo Transistor
  • Polarity
    NPN
  • Rise Time
    15 us
  • RoHs
    Yes
  • Collector Emitter Voltage (Breakdown)
    30 V
  • Collector-Dark Current
    100 nA
  • Collector Emitter Voltage(Saturation)
    0.4 V
  • Emitter Collector Voltage(Breakdown)
    30 V
  • Power Dissipation :
    70 mW

Temperature

  • Lead Soldering Temperature
    240 Degree C
  • Operating Temperature display
    -40 to 85 Degree C
  • Storage Temperature
    -40 to 85 Degree C

Technical Documents

Click to view more product details on manufacturer's website
Request a Quote