PTF080D3

Phototransistor by Optrans America

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The PTF080D3 from Optrans America is a Phototransistor with Collector Emitter Voltage (Breakdown) 30 V, Collector-Dark Current 100 nA, Collector Emitter Voltage(Saturation) 0.2 V, Emitter Collector Voltage(Breakdown) 5 V, Power Dissipation 200 mW. More details for PTF080D3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    PTF080D3
  • Manufacturer
    Optrans America

Applications

  • Application
    Optical Switches ,Edge Sensing ,Fiber Optical Communications ,Smoke Detectors

General Parameters

  • Collector Current
    50 mA
  • Collector Emitter Current
    0.5 mA
  • Collector-Light Current
    0.5 mA
  • Fall Time
    20 µS
  • Mounting Type
    Through-Hole
  • Peak Wavelength Sensitivity
    880 nm
  • Phototransistor Type
    Photo Transistor
  • Rise Time
    20 µS
  • Collector Emitter Voltage (Breakdown)
    30 V
  • Collector-Dark Current
    100 nA
  • Collector Emitter Voltage(Saturation)
    0.2 V
  • Emitter Collector Voltage(Breakdown)
    5 V
  • Power Dissipation :
    200 mW
  • Wavelength(Spectral Sensitivity)
    450 to 1050 nm

Temperature

  • Junction Temperature
    100 Degree C
  • Lead Soldering Temperature
    260 Degree C
  • Operating Temperature display
    -25 to 85 Degree C
  • Storage Temperature
    -30 to 100 Degree C

Technical Documents

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