TEMT1040

Phototransistor by Vishay Intertechnology

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The TEMT1040 from Vishay Intertechnology is a Phototransistor with Collector Emitter Voltage (Breakdown) 70 V, Collector-Dark Current 1 to 200 nA, Collector Emitter Voltage(Saturation) 0.3 V, Emitter Collector Voltage(Breakdown) 5 V, Power Dissipation 100 mW. More details for TEMT1040 can be seen below.

Product Specifications

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Product Details

  • Part Number
    TEMT1040
  • Manufacturer
    Vishay Intertechnology

Applications

  • Application
    Detector in Electronic Control and Drive Circuits, IR Detector for Daylight Application, Photo interrupters, Counter, Encoder

General Parameters

  • Collector Current
    50 mA
  • Collector-Light Current
    7 mA
  • Material
    Silicon
  • Mounting Type
    Surface Mount
  • Package
    Axial leads
  • Peak Wavelength Sensitivity
    880 nm
  • Phototransistor Type
    Photo Transistor
  • Polarity
    NPN
  • RoHs
    Yes
  • Thermal resistance :
    400 K/W
  • Turn-off time
    2.3 µs
  • Turn-on time
    2.0 µs
  • Collector Emitter Voltage (Breakdown)
    70 V
  • Collector-Dark Current
    1 to 200 nA
  • Collector Emitter Voltage(Saturation)
    0.3 V
  • Emitter Collector Voltage(Breakdown)
    5 V
  • Power Dissipation :
    100 mW
  • Wavelength(Spectral Sensitivity)
    730 to 1000 nm

Physical Properties

  • Dimension
    2.5 x 2 x 2.7 mm

Temperature

  • Junction Temperature
    100 Degree C
  • Lead Soldering Temperature
    260 Degree C
  • Operating Temperature display
    -40 to 85 Degree C
  • Storage Temperature
    -40 to 100 Degree C

Technical Documents

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